An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
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快科技报道指出，Find N6 的折痕深度将挑战行业极限，目标是在观感上接近「绝对平整」，触感过渡也更顺滑。上一代 Find N5 已将折痕压到 0.15mm 以内，而 Find N6 预计将进一步突破。
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